Product Details

The RF Small Signal Line

Silicon Lateral FET

N–Channel Enhancement–Mode MOSFET

Designed for use in low voltage, moderate power amplifiers such as portable 

analog and digital cellular radios and PC RF modems.

• Performance Specifications at 5.8 V, 900 MHz:

    Output Power = 30 dBm Min

    Power Gain = 10 dB Typ

    Efficiency = 50% Min

• Guaranteed Ruggedness at Load VSWR = 20:1

• New Plastic Surface Mount Package

• Available in Tape and Reel Packaging.

T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel

• Device Marking = 9745

Product Description

  Actual image of the product                

Product datasheet

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Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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