Product Descriptions
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
Product Features
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
Product Applications
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RD15HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-RD15HVF1-101 |
TYPE | MOSFET Power Transistor |
Manufacturer: | MITSUBISHI |
DC | NEW |
Supplier Device Package | TO-220 |
Package | TUBE |
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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