Product Details
| GENERAL DESCRIPTION The Am29F010 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The bytewide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers. DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance — 45 ns maximum access time ■ Low power consumption — 30 mA max active read current — 50 mA max program/erase current — <25 µA typical standby current ■ Flexible sector architecture — Eight uniform sectors — Any combination of sectors can be erased — Supports full chip erase ■ Sector protection — Hardware-based feature that disables/reenables program and erase operations in any combination of sectors — Sector protection/unprotection can be implemented using standard PROM programming equipment ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector — Embedded Program algorithm automatically programs and verifies data at specified address ■ Minimum 100,000 program/erase cycles guaranteed ■ Package options — 32-pin PLCC — 32-pin TSOP — 32-pin PDIP ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- AM29F010-70PC |
| Ihs Manufacturer | Original |
| Part Package Code | DIP |
| Package Description | PLASTIC, DIP-32 |
| Pin Count | 32 |
| Access Time-Max | 70 ns |
| Additional Feature | EMBEDDED ALGORITHM; HARDWARE DATA PROTECTION |
| Command User Interface | YES |
| Data Polling | YES |
| Endurance | 100000 Write/Erase Cycles |
| Length | 42.164 mm |
| Memory Density | 1048576 bit |
| Memory IC Type | FLASH |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Sectors/Size | 8 |
| Number of Terminals | 32 |
| Number of Words | 131072 words |
| Number of Words Code | 128000 |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 °C |
| Operating Temperature-Min | |
| Organization | 128KX8 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | DIP |
| Package Equivalence Code | DIP32,.6 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Programming Voltage | 5 V |
| Qualification Status | Not Qualified |
| Seated Height-Max | 5.715 mm |
| Sector Size | 16K |
| Standby Current-Max | 0.0001 A |
| Supply Current-Max | 0.05 mA |
| Supply Voltage-Max (Vsup) | 5.5 V |
| Supply Voltage-Min (Vsup) | 4.5 V |
| Supply Voltage-Nom (Vsup) | 5 V |
| Surface Mount | NO |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54 mm |
| Terminal Position | DUAL |
| Toggle Bit | YES |
| Type | NOR TYPE |
| Width | 15.24 mm |
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