Product Descriptions

The CY7C09349AV and CY7C09359AV are high-speed 3.3 V synchronous CMOS 4 K and 8 K × 18 dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory.[2] Registers on control, address, and data lines allow for minimal set-up and hold times. In pipelined output mode, data is registered for decreased cycle time. Clock to data valid  tCD2 = 9 ns (pipelined). Flow-through mode can also be used to bypass the pipelined output register to eliminate access latency. In flow-through mode data will be available tCD1 = 20 ns after the address is clocked into the device. Pipelined output or flow-through mode is selected via the FT/Pipe pin.

Each port contains a burst counter on the input address register. The internal write pulse width is independent of the  LOW-to-HIGH transition of the clock signal. The internal write pulse is self-timed to allow the shortest possible cycle times.

A HIGH on CE0 or LOW on CE1 for one clock cycle will power down the internal circuitry to reduce the static power consumption. The use of multiple chip enables allows easier banking of multiple chips for depth expansion configurations. In the pipelined mode, one cycle is required with CE0 LOW and CE1 HIGH to reactivate the outputs.

Counter enable inputs are provided to stall the operation of the address input and utilize the internal address generated by the internal counter for fast interleaved memory applications. A port’s burst counter is loaded with the port’s address strobe (ADS). When the port’s count enable (CNTEN) is asserted, the address counter will increment on each LOW-to-HIGH transition of that port’s clock signal. This will read/write one word from/into each successive address location until CNTEN is deasserted. The counter can address the entire memory array and will loop back to the start. Counter reset (CNTRST) is used to reset the burst counter.

All parts are available in 100-pin thin quad plastic flatpack (TQFP) packages.

Product Features

■ True dual ported memory cells which allow simultaneous  access of the same memory location 

■ Two flow-through/pipelined devices 

❐ 4 K × 18 organization (CY7C09349AV) 

❐ 8 K × 18 organization (CY7C09359AV) 

■ Three modes 

❐ Flow-through 

❐ Pipelined 

❐ Burst 

■ Pipelined output mode on both ports allows fast 67-MHz  operation 

■ 0.35-micron complementary metal oxide semiconductor  (CMOS) for optimum speed/power

■ High-speed clock to data access 9 and 12 ns (max) 

■ 3.3 V low operating power 

❐ Active = 135 mA (typical) 

❐ Standby = 10 µA (typical)

■ Fully synchronous interface for easier operation 

■ Burst counters increment addresses internally 

❐ Shorten cycle times 

❐ Minimize bus noise 

❐ Supported in flow-through and pipelined modes

■ Dual chip enables for easy depth expansion 

■ Upper and lower byte controls for bus matching 

■ Automatic power-down 

■ Available in 100-pin thin quad flat pack (TQFP)

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