Product Descriptions

The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

Product Features

• 2.5V ± 5 percent power supply for device operation 

• 2.5V ± 5 percent power supply for I/O interface 

• SSTL_2 compatible inputs/outputs 

• 4 banks operation 

• MRS cycle with address key programs

-. Read latency 3 (clock) 

-. Burst length (2, 4, 8 and Full page) 

-. Burst type (sequential & interleave) 

• Full page burst length for sequential burst type only 

• Start address of the full page burst should be even 

• All inputs except data & DM are sampled at the positive  going edge of the system clock 

• Differential clock input 

• No Write Interrupted by Read function

• Data I/O transactions on both edges of Data strobe  

• DLL aligns DQ and DQS transitions with Clock transition 

• Edge aligned data & data strobe output 

• Center aligned data & data strobe input  

• DM for write masking only 

• Auto & Self refresh 

• 32ms refresh period (4K cycle) 

• 100pin TQFP package 

• Maximum clock frequency up to 250MHz 

• Maximum data rate up to 500Mbps/pin

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