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Hot sale Original K4G41325FE-HC28 Memory IC DRAM Chip GDDR5 SGRAM 4Gbit 128Mx32 1.35V/1.5V 170-Pin FBGA

K4G41325FE-HC28

Model:K4G41325FE-HC28

Manufacturer:Original

Package:FBGA-170

Detail


Product Description



1. FEATURES
• 1.5V + 0.045V power supply for device operations(VDD)
(Specific parts support 1.35V + 0.0405V)
• 1.5V + 0.045V power supply for I/O interface(VDDQ)
(Specific parts support 1.35V + 0.0405V)
• Maximum CK/CK up to 2.25GHz
• Maximum WCK/WCK up to 4.5GHz
• Maximum data rate up to 9.0Gbps/pin
• Halogen free 170 Ball FBGA(RoHS Compliant)
• Single ended interface for data, address and command
• Quarter data-rate differential clock inputs CK/CK for ADD/CMD
• Two half data-rate differential clock inputs WCK/WCK,
each associated with two data bytes(DQ, DBI, EDC)
• Double Data Rate (DDR) data (WCK)
• Single data rate (SDR) command (CK)
• Double data rate (DDR) addressing (CK)
• 16 internal banks for concurrent operation
• 4 bank groups for tCCDL 3 tCK and 4 tCK
• 8n prefetch architecture: 256bit per array read or write access
• Burst length: 8 only
• Programmable CAS latency:
• Programmable write latency :
• WRITE Data mask function via address bus
(single/double byte mask)
• Data bus inversion(DBI) and address bus inversion(ABI)
• Input/output PLL on/off mode
• Address training: Address input monitoring by DQ pins
• WCK2CK clock training with phase information by EDC pins
• Data read and write training via READ FIFO
• READ FIFO pattern preload by LDFF command
• Direct write data load to READ FIFO by WRTR command
• Consecutive read of READ FIFO by RDTR command
• Read/Write data transmission integrity secured by cyclic
redundancy check ; CRC-8(X8+X2+X+1) for EDC
• Read/write EDC on/off mode
• Programmable EDC hold pattern for CDR
• Programmable CRC read latency(CRCRL) range 0 to 3 tCK
• Programmable CRC write latency(CRCWL) range 7 to 14 tCK
• Low Power modes
• RDQS mode on EDC pin
• Auto & self refresh modes
• Auto precharge option for each burst access
• 32ms, auto refresh (16K cycles)
• On-die termination (ODT)
; Nominal values of 60ohm and 120ohm
• Pseudo open drain(POD-15) compatible inputs and outputs
; 40ohm pull down, 60ohm pull up
• ODT and output driver strength auto-calibration with external
resistor ZQ pin(120ohm)
• Programmable termination and driver strength offsets
• Output driver strength adjustment by MRS
• Selectable external or internal VREF for data inputs
;Programmable offsets for internal VREF
• Separate external VREF for address / command inputsdmd
• Vendor ID, FIFO depth and Density info fields for identification
• X32/X16 mode configuration set at power-up with EDC pin
• 16bits support for vendor ID/Density/FIFO depth MRS
• Mirror function with MF pin
• Boundary scan function with SEN pin


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K4G41325FE-HC28

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