Product Descriptions
The EECMOS GAL20V8QS devices are fabricated using National's CS80BEV 0.8u Electrically Erasable CMOS process.This advanced process makes National's GAL20V8QS extremely fast,allowing controlled output edge rates which dramatically reduce noise. Low noise is actually specified and guaranteed with National's GAL20V8QS Quiet Series devices.
National's fast programming algorithm allows the GAL20V8QS to be progrmmed significantly faster than similar devices using industry standard programmers. Fast programming reduces the cost of programming by greatly increasing programming throughput.National guarantees a minimum of 100 erase/write cycles.
Unique test circuitry and reprogrammable cells allow complete AC,DC,cell,and functionality testing during manufacture.Therefore,National guarantees 100 percent field programmability and funtionality of GAL devices.IN addlition ,a security circuit is built-in,providing proprietary designs with copy protection.
Product Features
High performance 0.8u EECMOS technology
- 10 ns maximum propagation delay
- 5 ns setup time delay
- 7.5 ns clock to registered output delay
- fMAX = 80 MHz
- Reduced ground bounce
-2000V ESD protection
Reduced power
- lcC max = 90 mA @ 25 MHz
Electrically erasable cell technology
- 100 percent tested at manufacture
Fast programming algorithm
- Reduces programming cost, increases throughput
Emulates popular PAL devices
Fully supported by National's OPALTM and OPAL jr software as well as 3rd-party PLD development software
Commercial and industrial grades
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-GAL20V8-20LNC |
| Category | Integrated Circuits (ICs) |
| Embedded | |
| PLDs (Programmable Logic Device) | |
| Manufacturer | - |
| Series | GAL®20V8 |
| Packaging | Bulk |
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Programmable Type | EE PLD |
| Speed | 20 ns |
Product Photos
For more product information, please download the PDF
