Product Descriptions

W9812G6IH  is  a  high-speed  synchronous  dynamic  random  access  memory  (SDRAM),  organized  as  2M words × 4 banks × 16 bits. W9812G6IH delivers a data bandwidth of up to 200M words per second (-5). For different application, W9812G6IH is sorted into the following speed grades: -5/-6/-6C and -75. The –5 is compliant to the 200MHz/CL3 specification. The –6/-6C/-6I is compliant to the 166MHz/CL3 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the 133MHz/CL3 specification.

Accesses  to  the  SDRAM  are  burst  oriented.  Consecutive  memory  location  in  one  page  can  be  accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command.  Column  addresses  are  automatically  generated  by  the  SDRAM  internal  counter  in  burst  operation.  Random  column  read  is  also  possible  by  providing  its  address  at  each  clock  cycle.  The  multiple bank nature enables interleaving among internal banks to hide the precharging time.

By  having  a  programmable  Mode  Register,  the  system  can  change  burst  length,  latency  cycle,  interleave  or  sequential  burst  to  maximize  its  performance.  W9812G6IH  is  ideal  for  main  memory  in  high performance applications.

Product Features

•  3.3V       ± 0.3V Power Supply

• Up to 200 MHz Clock Frequency

• 2,097,152       Words       × 4 banks × 16 bits organization  

• Self       Refresh       Mode      

• CAS Latency: 2 and 3

• Burst Length: 1, 2, 4, 8 and full page

• Burst Read, Single Writes Mode

• Byte Data Controlled by LDQM, UDQM

• Auto-precharge and Controlled Precharge

• 4K Refresh cycles / 64 mS

• Interface:       LVTTL      

• Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

Product Specification

Product Photos

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