Product Descriptions
These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Product Features
3.0 A, 50 V.
RDS(ON) = 0.130 Ω @ VGS = 10 V
RDS(ON) = 0.200 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Product Applications
Battery switch
Load switch
Motor controls
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-SI9955DY |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI9955 |
Product Photos
For more product information, please download the PDF
