Product Descriptions
The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide infrared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector−emitter breakdown voltage. The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628−4 provide four isolated channels per package.
Product Features
• Collector−emitter voltage: 350 V (min.)
• Current transfer ratio: 50% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
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