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Hot-selling and scarce CY7C1148KV18-400BZXC 18-Mbit DDR II+ SRAM Two-Word Burst Architecture BGA spot stock

CY7C1148KV18-400BZXC

Model:CY7C1148KV18-400BZXC

Manufacturer:/

Package:BGA

Detail

Product  Descriptions


The CY7C1146KV18, CY7C1157KV18, CY7C1148KV18, and CY7C1150KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 8-bit words (CY7C1146KV18), 9-bit words (CY7C1157KV18), 18-bit words (CY7C1148KV18), or 36-bit words (CY7C1150KV18) that burst sequentially into or out of the device.


Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design.


All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry


Product  Features


■ 18 Mbit density (2 M x 8, 2 M x 9, 1 M x 18, 512 K x 36)

■ 450-MHz clock for high bandwidth

■ Two-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz

■ Available in 2.0 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

■ DDR II+ operates with 2.0 cycle read latency when DOFF is asserted HIGH

■ Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW

■ Core VDD = 1.8V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1]

❐ Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement


Product Specification


AttributeAttribute value
ANSM-Part#ANSM-CY7C1148KV18-400BZXC
CategoryIntegrated Circuits (ICs)
Memory
Memory
Mfr-
PackagingTray
Part StatusObsolete
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, DDR II+
Memory Size18Mbit
Memory Organization1M x 18
Memory InterfaceParallel
Clock Frequency400 MHz
Voltage - Supply1.7V ~ 1.9V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case165-LBGA
Supplier Device Package165-FBGA (13x15)
Base Product NumberCY7C1148


Product Photos


CY7C1148KV18-400BZXC


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