Product  Descriptions

The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (IO0 through IO7) are placed in a high-impedance state when:

• Deselected (CE HIGH)

• Outputs are disabled (OE HIGH)

• When the write operation is active(CE LOW and WE LOW)

Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A14).

Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins.

Product Features

• Pin- and function-compatible with CY7C199C

• High speed

— tAA = 10 ns

• Low active power

— ICC = 80 mA @ 10 ns

• Low CMOS standby power

— ISB2 = 3 mA

• 2.0V Data Retention

• Automatic power-down when deselected

• CMOS for optimum speed/power

• TTL-compatible inputs and outputs

• Easy memory expansion with CE and OE features

• Available in Pb-free 28-pin 300-Mil wide Molded SOJ and 28-pin TSOP I packages

Product Specification

Product Photos

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