Product Descriptions
The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The p-channel power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.
P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.
Product Features
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-IRF9Z30PBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF9Z30 |
Product Photos

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