IC CSD17577Q3A New Original Electronic components BOM Integrated circuit N-Channel NexFET Power MOSFET_Integrated Circuit

Product Descriptions

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications.

• Low Qg and Qgd

• Low Thermal Resistance

• Avalanche Rated

• Pb Free

• RoHS Compliant

• Halogen Free

• SON 3.3 mm × 3.3 mm Package

• Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

• Optimized for Control, and Sync FET Applications

Part#	CSD17577Q3A
category	Discrete Semiconductor Products
category	Transistor - FET, MOSFET - Single
manufacturer	-
series	NexFET™
Package	Tape and Reel (TR)
Package	Shear Band (CT)
Product Status	in stock
FET type	N channel
technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30V
Current at 25°C - Continuous Drain (Id)	35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
On-resistance (max) at different Id, Vgs	4.8 milliohms @ 16A, 10V
Vgs(th) (maximum) at different Ids	1.8V @ 250µA
Gate charge (Qg) at different Vgs (max)	35nC @ 10V
Vgs (max)	±20V
Input capacitance (Ciss) at different Vds (max)	2310 pF @ 15V
FET function	-
Power dissipation (max)	2.8W(Ta), 53W(Tc)
Operating temperature	-55°C ~ 150°C (TJ)
installation type	Surface Mount Type
Supplier Device Packaging	8-VSONP (3x3.3)
Package/Enclosure	8-PowerVDFN
Basic product number	CSD17577

CSD17577Q3A

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