Product Details
Description
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
Product Description
| Attribute | Attribute Value |
| Part# | IRFP250N |
| Manufacturer | / |
| Part Package | TO-247 |
| Package Description | TO-247AC, 3 PIN |
| Pin Count | 3 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 315 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 30 A |
| Drain-source On Resistance-Max |
0.075 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max |
175 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 225 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 214 W |
| Pulsed Drain Current-Max (IDM) | 120 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Actual image of the product
