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Hot sale Original 2N2222A TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 Transistor

2N2222A

Model:2N2222A

Manufacturer:Original

Package:TO-18

Detail

Product Overview 

In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A 800 continuous collector voltage is necessary to achieve high efficiency.Product comes in the supplier's device package TO-18.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.

Product Features  

the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18

Product Applications

2N2222A applications of single BJT transistors.

  • Inverter

  • Interface

  • Driver

  • Muting

Product Description


Type

Description

ANSC PART# 

ANSC - 2N2222A

category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

Mfr

-

Series

-

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

800 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

500 mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-206AA, TO-18-3 Metal Can

Supplier Device Package

TO-18

Base Product Number

2N2222

Actual image of the product 

2N2222A

Product datasheet 

For more information, please download

   

Payment&Transportation

详情8

Official Certificate&Certificate

2

Standard packaging

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Multiple product supply

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