Product Details
Brief Description: The 2N3055 is a high-power NPN bipolar junction transistor (BJT).
It is a single-element device with a TO-3 package and a maximum collector current of 15A.
Product Features
-
High-power NPN bipolar junction transistor (BJT)
-
Single-element device
-
TO-3 package
-
Maximum collector current: 15A
-
Maximum collector-emitter voltage: 60V
-
Minimum DC current gain (hFE): 5
-
Operating temperature range: -55°C to 200°C
-
Power dissipation: 115W (absolute maximum)
-
Transition frequency: 2.5MHz
Application Grade: The 2N3055 is designed for high-power switching applications,
making it suitable for use in power supplies, motor controls, and other high-current applications.
Product Applications
-
Power supplies
-
Motor controls
-
Amplifiers
-
Switching circuits
-
High-current applications
Overall, the 2N3055 is a high-power NPN bipolar junction transistor designed for high-current switching applications. Its high power dissipation and high collector current make it suitable for use in a variety of applications, including power supplies, motor controls, and other high-current applications.
Product Description
|
Type |
Description |
|---|---|
| ANSC PART# | ANSC - 2N3055 |
|
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
|
Mfr |
/ |
|
Series |
- |
|
Packaging |
Tray |
|
Part Status |
Obsolete |
|
Transistor Type |
NPN |
|
Current - Collector (Ic) (Max) |
15 A |
|
Voltage - Collector Emitter Breakdown (Max) |
60 V |
|
Vce Saturation (Max) @ Ib, Ic |
3V @ 3.3A, 10A |
|
Current - Collector Cutoff (Max) |
700µA |
|
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 4A, 4V |
|
Power - Max |
115 W |
|
Frequency - Transition |
- |
|
Operating Temperature |
200°C (TJ) |
|
Mounting Type |
Chassis Mount |
|
Package / Case |
TO-204AA, TO-3 |
|
Supplier Device Package |
TO-3 |
|
Base Product Number |
2N30 |
Actual image of the product
Product datasheet
For more information, please download
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