| Part# | NCE0140I2 |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 40 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 13 |
| QG(nC) | 94 |
| PD(W) | 140 |
| PKG | / |






Image is only a referenceOriginal spot sale of IC chip high-voltage N-channel IGBT field-effect transistor NCE0140I2 TO-251
NCE0140I2
Model:NCE0140I2
Manufacturer:/
Package:TO251
| Part# | NCE0140I2 |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 40 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 13 |
| QG(nC) | 94 |
| PD(W) | 140 |
| PKG | / |





