Hot selling One stop supply of electronic components SI1024X-T1-GE3 Dual N-Channel 20-V (D-S) MOSFET 485mA 250mW SC-89_Electronic components & Bom

Product Features

• Halogen-free According to IEC 61249-2-21

• Definition

• TrenchFET® Power MOSFET: 1.8 V Rated

• Very Small Footprint

• High-Side Switching

• Low On-Resistance: 0.7 ohm

• Low Threshold: 0.8 V (typ.)

• Fast Switching Speed: 10 ns

• 1.8 V Operation

• Gate-Source ESD Protected: 2000 V

• Compliant to RoHS Directive 2002/95/EC

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

• Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

Attribute	Attribute value
ANSM-Part#	ANSM-SI1024X-T1-GE3
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	FET, MOSFET Arrays
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
	Cut Tape (CT)
	Digi-Reel®
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	485mA
Rds On (Max) @ Id, Vgs	700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	250mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SC-89 (SOT-563F)
Base Product Number	SI1024

SI1024X-T1-GE3

Product Data Book：

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For more product information, please download the PDF

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详情页3.1

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