One stop supply of electronic components BFU590G RF Transistor NPN 12V 200mA 8.5GHz 2W NPN wideband silicon RF transistor SC-73_Electronic components & Bom

Product Descriptions

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

• Medium power, high linearity, high breakdown voltage RF transistor

• AEC-Q101 qualified

• Maximum stable gain 13 dB at 900 MHz

• PL(1dB) 21.5 dBm at 900 MHz

• 8.5 GHz fT silicon technology

• Automotive applications

• Broadband amplifiers

• Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)

• Large signal amplifiers for ISM applications

Attribute	Attribute value
ANSM-Part#	ANSM-BFU590G
Category	Discrete Semiconductor Products
	Transistors
	Bipolar (BJT)
	Bipolar RF Transistors
Mfr	NXP USA Inc.
Series	-
Package	Tape & Reel (TR)
	Cut Tape (CT)
	Digi-Reel®
Product Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8.5GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 80mA, 8V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SC-73
Base Product Number	BFU590

BFU590G 5

Product Data Book：

搜狗高速浏览器截图20231207142644

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搜狗高速浏览器截图20231207142717

搜狗高速浏览器截图20231207142728

For more product information, please download the PDF

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