Product Descriptions

2N6661 is an enhancement-mode (normally-off) tran-sistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-bination produces a device with the power-handlingcapabilities of bipolar transistors, and the high inputimpedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway andthermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where very-low threshold voltage, high breakdown voltage, high-input impedance, low-input capacitance, and fastswitching speeds are desired.

Product Features

• Free from secondary breakdown

• Low power drive requirement

• Ease of paralleling

• Low Css and fast switching speeds

• Excellent thermal stability

• Integral source-drain diode

• High input impedance and high gain

Product Applications

• Motor controls

• Converters

• Amplifiers

• Switches

• Power supply circuits

• Drivers: relays, hammers, solenoids, lampsmemories, displays, bipolar transistors, etc.

Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

Multiple product supply

Company office environment

Warehouse Real Shot

Standard packaging

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