Hot selling One stop supply of electronic components IRFB3306PBF High Efficiency Synchronous Rectification in SMPS TO-220AB_Electronic components & Bom

Product Benefits

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche SOA

• Enhanced body diode dV/dt and dI/dt Capability

• Lead-Free

• RoHS Compliant, Halogen-Fre

• High Efficiency Synchronous Rectification in SMPS

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

Attribute	Attribute value
ANSM-Part#	ANSM-IRFB3306PBF
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4520 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFB3306

IRFB3306PBF

Product Data Book：

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For more product information, please download the PDF

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