Professional supply Integrated circuit 2SB1386T100Q Bipolar (BJT) PNP 20V 5A 120MHz 2W Low frequency transistor MPT3_Electronic components & Bom

Product Structure

• Epitaxial planar type

• PNP silicon transistor

1) Low VCE(sat).

VCE(sat) = −0.35V (Typ.)

(IC/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118 /

2SD2097.

Attribute	Attribute value
ANSM-Part#	ANSM-2SB1386T100Q
Category	Discrete Semiconductor Products
	Transistors
	Bipolar (BJT)
	Single Bipolar Transistors
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
	Cut Tape (CT)
	Digi-Reel®
Product Status	Not For New Designs
Transistor Type	PNP
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 4A
Current - Collector Cutoff (Max)	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 2V
Power - Max	2 W
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	MPT3
Base Product Number	2SB1386

2SB1386T100Q

Product Data Book：

搜狗高速浏览器截图20231221163051

搜狗高速浏览器截图20231221163057

For more product information, please download the PDF

详情8.1

详情页3.1

详情5.1

详情6.1

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