Professional supply integrated circuit IC BSZ123N08NS3GATMA1 N-Channel 80V 10A (Ta) OptiMOS3 Power-Transistor PG-TSDSON-8_Electronic components & Bom

Product Features

• Optimized technology for DC/DC converters

• Excellent gate charge x Rds(on) product (FOM)

• Superior thermal resistance

• N-channel,normallevel

• 100 percent avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC1) for target applications

• Halogen-free according to lEC61249-2-21

Attribute	Attribute value
ANSM-Part#	ANSM-BSZ123N08NS3GATMA1
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
	Cut Tape (CT)
	Digi-Reel®
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerVDFN
Base Product Number	BSZ123

BSZ123N08NS3GATMA1

Product Data Book：

搜狗高速浏览器截图20240102131849

搜狗高速浏览器截图20240102131853

搜狗高速浏览器截图20240102131859

For more product information, please download the PDF

详情8.1

详情页3.1

详情5.1

详情6.1

详情9

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