Product Details

The FLM7785-4F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 35.5 to 36.5 dBm, Power(W) 3.55 to 4.47 W, P1dB 35.5 to 36.5 dBm, Power Gain (Gp) 7.5 to 8.5 dB. Tags: Flanged. More details for FLM7785-4F can be seen below.

Product Description

Product Details

• Part NumberFLM7785-4F

• ManufacturerSumitomo Electric Device Innovations

• DescriptionGaAs FET from 7.7 to 8.5 GHz

General Parameters

• Transistor TypeFET

• TechnologyGaAs

• Application IndustryCommunication, Wireless Infrastructure

• Application TypeC-Band, Communication

• ApplicationC Band, Communication System

• Frequency7.7 to 8.5 GHz

• Power35.5 to 36.5 dBm

• Power(W)3.55 to 4.47 W

• P1dB35.5 to 36.5 dBm

• Power Gain (Gp)7.5 to 8.5 dB

• Power Added Effeciency0.35

• Voltage - Gate-Source (Vgs)-5 V

• Drain Current1100 to 1300 mA

• IMD-46 to -44 dBc

• Impedance Zs50 Ohms

• Thermal Resistance5 to 6 Degree C/W

• Package TypeFlanged

• PackageIA

• Storage Temperature-65 to 175 Degree C

• NoteSaturated Drain Current : 1700 to 2600 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

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