Product Details

Brief Description: The JAN2N2906A is a military-grade, PNP bipolar junction transistor (BJT) manufactured. It is designed for use in high-reliability applications and features a high collector-emitter breakdown voltage of 60V.

Features:

• High collector-emitter breakdown voltage: 60V

• High collector current: 600mA

• High power dissipation: 500mW

• High operating temperature range: -65°C to 200°C

• Low leakage current: 50nA

• High DC current gain: 40 at 150mA and 10V

• PNP transistor type

• Through-hole mounting

• Non-RoHS compliant

Application Grade: The JAN2N2906A is designed for use in high-reliability applications, such as military, aerospace, and industrial systems, where high voltage, high current, and high temperature operation are required.

Applications:

• High-voltage power switching and control

• High-current power amplification

• High-temperature and high-reliability applications

• Military and aerospace systems

• Industrial control and automation systems

• Power supplies and converters

• Motor control and drive systems

Overall, the JAN2N2906A is a high-performance, high-reliability PNP BJT designed for use in demanding applications where high voltage, high current, and high temperature operation are required. Its military-grade design and high-performance features make it an ideal choice for applications in the military, aerospace, and industrial sectors.

Product Description

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Product datasheet 

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Official Certificate&Certificate

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