Product Details
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.
Features:
• Overall current gain...1.5 typical (4N24)
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
•Motor control
Product Description
| Type | Description |
| PART# | JANTX4N23 |
| Category | Isolators |
| Optocouplers, Optoisolators | |
| Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | / |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| Number of Channels | 1 |
| Voltage - Isolation | 1000VDC |
| Current Transfer Ratio (Min) | 60% @ 10mA |
| Current Transfer Ratio (Max) | - |
| Turn On / Turn Off Time (Typ) | - |
| Rise / Fall Time (Typ) | 20µs, 20µs (Max) |
| Input Type | DC |
| Output Type | Transistor with Base |
| Voltage - Output (Max) | 40V |
| Current - Output / Channel | 50mA |
| Voltage - Forward (Vf) (Typ) | 1.5V (Max) |
| Current - DC Forward (If) (Max) | 40 mA |
| Vce Saturation (Max) | 300mV |
| Operating Temperature | -55°C ~ 125°C |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
Product Photos
