Product Details
| Description AP60T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. ▼Simple Drive Requirement ▼Low Gate Charge ▼Fast Switching Characteristic ▼RoHS Compliant & Halogen-Free |
Product Description
| Type# | Description |
| PART# | AP60T03GH-HF |
| Ihs Manufacturer | / |
| Part Package Code | TO-252 |
| Package Description | SMALL OUTLINE, R-PSSO-G2 |
| Pin Count | 4 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 45 A |
| Drain-source On Resistance-Max | 0.012 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120 A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Product Photos
