Product Description

Overview

This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.

Applications

• TBA

Features

• 30A, 50V

• RDS(ON)= 0.040Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Actual image of the product                

Product datasheet

For more information, please download  

BUZ11

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

Welcome to visit our company

Warehouse Real Shot