Product Description
MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.
Product Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
Product Applications
ISM applications
DC large signal applications
Product Description
| Type | Description |
| ANSC PART# | ANSC - MRF6V2150NBR1 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| RF FETs, MOSFETs | |
| Manufacturer | Original |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Obsolete |
| Technology | LDMOS |
| Frequency | 220MHz |
| Gain | 25dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 450 mA |
| Power - Output | 150W |
| Voltage - Rated | 110 V |
| Mounting Type | Chassis Mount |
| Package / Case | TO-272BB |
| Supplier Device Package | TO-272 WB-4 |
| Base Product Number | MRF6 |
Actual image of the product
Product datasheet
For more information, please download
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Official Certificate&Certificate
Standard packaging
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