Product Details
STP12NM50FP Description
STP12NM50FP N-Channel MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction, and electronic lamp ballasts. STP12NM50FP MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. STP12NM50FP STMicroelectronics is ideally suitable for high-voltage applications where current is not an important factor.
STP12NM50FP Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
STP12NM50FP Applications
Primary Side Telecom
Secondary Side Synchronous Rectifier
Motor Control
Product Description
ANSC PART# | ANSC- STP12NM50FP |
Part# | STP12NM50FP |
Type： | Electronic components |
Manufactor | STMicroelectronics |
DC | new |
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Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| Mfr | STMicroelectronics |
| Series | MDmesh™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | STP12 |
Product datasheet
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