Product Description
STW12NK90Z is produced with SuperMESHTM Power MOSFET technology, which is derived from a highly optimized version of ST's well-known strip-based PowerMESHTM layout. It is available in the TO-247-3 package and can be used in switching applications, according to the STW12NK90Z datasheet. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.
Product Features
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Extremely high dv/dt capability
Very good manufacturing repeatability
Product Applications
Switching applications
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - STW12NK90Z |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
SuperMESH™ |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
900 V |
|
Current - Continuous Drain (Id) @ 25°C |
11A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
880mOhm @ 5.5A, 10V |
|
Vgs(th) (Max) @ Id |
4.5V @ 100µA |
|
Gate Charge (Qg) (Max) @ Vgs |
152 nC @ 10 V |
|
Vgs (Max) |
±30V |
|
Input Capacitance (Ciss) (Max) @ Vds |
3500 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
230W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-247-3 |
|
Package / Case |
TO-247-3 |
|
Base Product Number |
STW12 |
Actual image of the product
Product datasheet
For more information, please download
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Official Certificate&Certificate
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