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Original FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

FDS2672

Model:FDS2672

Manufacturer: ON

Detail

Product Details

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

• 3.0 A, 200 V. RDS(ON) = 0.125 Ω @ VGS = 10 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

Product Description

ANSC PART#

 ANSC- FDS2672

Part#

FDS2672

Type:

Transistors

Manufactor

Original

DC

new

Actual image of the product 

30964.jpg

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

onsemi

Series

UltraFET™

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2535 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Product Number

FDS26

Product datasheet   

For more information, please download​

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Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Original FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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