Product Details
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.
Product Description
|
ANSC PART# |
ANSC- NDT014 |
|
Part# |
NDT014 |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
Actual image of the product
|
TYPE |
DESCRIPTION |
|---|---|
|
category |
Discrete semiconductor products transistor FET，MOSFET Single FET, MOSFET |
|
manufacturer |
onsemi |
|
series |
- |
|
wrap |
Tape & Reel (TR) Cut Tape (CT)l |
|
Part status |
Sale |
|
FET type |
N-channel |
|
technology |
MOSFETs (Metal Oxides) |
|
Drain-to-source voltage (Vdss) |
60 V |
|
Current at 25°C - Continuous Drain (Id) |
2.7A（Ta） |
|
Drive voltage (max. Rds On, min. Rds On) |
10V |
|
On-resistance (max.) at different IDs, Vgs |
200 mOhm @ 1.6A, 10V |
|
Vgs(th) with different IDs (max) |
4V @ 250µA |
|
Gate charge (Qg) at different Vgs (max) |
11 nC @ 10 V |
|
VGS (Max) |
±20V |
|
Input Capacitance (Ciss) at Different VDS (Max) |
155 pF @ 25 V |
|
FET function |
- |
|
Power Dissipation (Max) |
3W（Ta） |
|
Operating temperature |
-65°C ~ 150°C（TJ） |
|
Installation type |
Surface mount type |
|
Supplier device package |
SOT-223-4 |
|
Package/Case |
TO-261-4，TO-261AA |
|
Basic product number |
NDT014 |
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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