Product Details
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage VGS(TH) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
• Qualified to AEC-Q101 standards for High Reliability
Applications
• DC-DC Converters
• Power Management Functions
Product Description
ANSC PART# | ANSC- DMP2035U-7 |
Part# | DMP2035U-7 |
Type： | Transistors |
Manufactor | Original |
DC | new |
Actual image of the product
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | Diodes Incorporated |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 4.5 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 810mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | DMP2035 |
Product datasheet
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