Product Details
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Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. ● Ultra Low On-Resistance ● P-Channel MOSFET ● Surface Mount ● Available in Tape & Reel ● Lead-Free |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- IRF7240PBF |
| Configuration | Single With Built-In Diode |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (ID) | 10.5 A |
| Drain-source On Resistance-Max | 0.015 Ω |
| FET Technology | Metal-Oxide Semiconductor |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | Enhancement Mode |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | Plastic/Epoxy |
| Package Shape | Rectangular |
| Package Style | Small Outline |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-Channel |
| Power Dissipation-Max (Abs) | 2.5 W |
| Pulsed Drain Current-Max (IDM) | 43 A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Finish | Matte Tin |
| Terminal Form | Gull Wing |
| Terminal Position | Dual |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | Switching |
| Transistor Element Material | Silicon |
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BGA |
