Product Details
Power Management Switch Applications
High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V)
Ron = 74 mΩ (max) (@VGS = 2.5 V)
Ron = 56 mΩ (max) (@VGS = 4.0 V)
Product Description
| Type# | Description |
| ANSC PART# | ANSC-SSM3K341R |
| Ihs Manufacturer | Original |
| Factory Lead Time | 52 Weeks, 1 Day |
| Samacsys Manufacturer | Original |
| Avalanche Energy Rating (Eas) | 28.9 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 6 A |
| Drain-source On Resistance-Max | 0.036 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 24 A |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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