Product Details
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
• –3.8 A, –20 V, RDS(ON) = 0.043 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Product Description
| Type | Description |
| ANSC PART# | ANSC-SI6993DQ-T1-GE3 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | Original |
| Series | TrenchFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Base Product Number | SI6993 |
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