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One-Stop Supply Original Electronic Components X2-Class HiperFETTM Power MOSFET TO220AB IXFP34N65X2M

IXFP34N65X2M

Model:IXFP34N65X2M

Manufacturer:Original

Package:TO-220

Detail

Product Details


Brief Description: The IXFP34N65X2M is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) , designed for high-current and high-voltage applications. It features a TO-220-3 full pack, isolated tab package and is available in a tube packaging.

Features:

  • High-power N-channel MOSFET with a continuous drain current of 34A at 25°C

  • High voltage rating of 650V drain-to-source voltage

  • Low on-resistance of 100mΩ at 17A and 10V

  • High gate charge of 56nC at 10V

  • High input capacitance of 3230pF at 25V

  • Operating temperature range of -55°C to 150°C

  • Power dissipation of 40W at 25°C

  • Drive voltage range of 10V

  • Gate-source voltage range of ±30V

  • Threshold voltage of 5V at 1.5mA

Application Grade: 

The IXFP34N65X2M is designed for high-power, high-voltage 

applications such as:

  • Power supplies

  • Motor drives

  • Power conversion

  • Renewable energy systems

  • Industrial automation


Applications:

  • High-power switching applications

  • High-voltage power supplies

  • Motor control systems

  • Power conversion systems

  • Renewable energy systems

  • Industrial automation systems

Overall, the IXFP34N65X2M is a high-power, high-voltage MOSFET designed for demanding applications that require high current and voltage handling capabilities. Its robust design and high-performance features make it an ideal choice for a wide range of power electronics applications.


Product Description


Type

Description

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

/

Series

HiPerFET™, Ultra X2

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

56 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3230 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

-

Qualification

-

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Full Pack, Isolated Tab

Base Product Number

IXFP34


Actual image of the product 

IXFP34N65X2M


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