Product Details
DESCRIPTION
2SC2630 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.
APPLICATION
40 to 60 watts output power amplifiers in VHF band mobile radio applications.
Product Description
| Type# | Description |
| PART# | 2SC2630 |
| Manufacturer | MITSUBISHI |
| Package Description | FLANGE MOUNT, R-CDFM-F6 |
| Pin Count | 5 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 14 A |
| Collector-Emitter Voltage-Max | 17 V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 10 |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| JESD-30 Code | R-CDFM-F6 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Temperature-Max | 175 °C |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 100 W |
| Power Dissipation-Max (Abs) | 5.5 W |
| Power Gain-Min (Gp) | 7 dB |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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Product datasheet
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