Product Details
The IKW50N60T is a high-performance Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) , designed for demanding power electronic applications. This IGBT is packaged in a reliable TO-247 case and is RoHS compliant, making it an eco-friendly choice for modern electronics.
Product Features
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High voltage capability with a maximum collector-emitter breakdown voltage of 600V
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High current handling with a maximum collector current of 80A
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Low on-state voltage drop (Vce(on)) of 2V at 15V and 50A
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Fast switching times and high frequency operation
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Trench Field Stop technology for improved ruggedness and reliability
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Product Applications
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Primary applications:
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Power supplies and converters
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Motor drives and control systems
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Renewable energy systems and grid infrastructure
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Secondary applications:
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Aerospace and defense systems
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Industrial automation and control systems
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Medical devices and equipment
Product Description
| Product Attribute | Attribute Value |
| Part# | IKW50N60T |
| Manufacturer: |
/ |
| Product Category: | Transistors |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Maximum Gate Emitter Voltage: | - 20 V, 20 V |
| Continuous Collector Current at 25 C: | 80 A |
| Pd - Power Dissipation: | 333 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Series: | Trenchstop IGBT3 |
| Packaging: | Tube |
| Continuous Collector Current Ic Max: | 80 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Height: | 20.9 mm |
| Length: | 15.9 mm |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: | 240 |
| Subcategory: | IGBTs |
| Tradename: | TRENCHSTOP |
| Width: | 5.03 mm |
| Unit Weight: | 1.340411 oz |
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Product datasheet
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