Product Details
power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
Product Description
| Attribute | Attribute Value |
| Part# | IRF460 |
| Type： | Transistors |
| Manufactor | Original |
| DC | new |
| Part Status | Active |
| Package Description | TO-3, 2 PIN |
| Avalanche Energy Rating (Eas) | 1200 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500 V |
| Drain Current-Max (ID) | 21 A |
| Drain-source On Resistance-Max | 0.31 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 84 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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