Hot sale Original FDS6680A Transistors MOSFET N-CH 30V 12.5A 8SOIC N-Channel 30 V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC_Electronic components & Bom

Product Description

The FDS6680A is a high-performance N-Channel PowerTrench MOSFET from ON Semiconductor,

designed for switching applications.

This single-element, surface-mount device features a logic-level compatible gate,

making it suitable for use in a wide range of applications.

Product Features

Logic-level compatible gate for easy integration with microcontrollers and logic circuits

High current capability with a continuous drain current of 12.5A

High voltage rating with a drain-to-source breakdown voltage of 30V

Low on-resistance of 9.5mΩ, enabling efficient power switching

Operating temperature range of -55°C to 150°C, making it suitable for harsh environments

Lead-free and RoHS3 compliant, ensuring environmental sustainability

Surface-mount package with a 8-SOIC (0.154, 3.90mm Width) footprint

Product Applications

Switching power supplies

Motor control

LED lighting

Power conversion

Automotive electronics

Embedded Modules:

None specified

Product Description

Type	Description
ANSC PART#	ANSC - FDS6680A
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	-
Series	PowerTrench®
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Base Product Number	FDS6680

FDS6680A

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