Product Details
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Product Description
Type | Description |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | - |
Series | HEXFET® |
Packaging | Tube |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55°C ~ 155°C (TJ) |
Grade | - |
Qualification | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRF5305 |
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Product datasheet
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