Product Details
Brief Description: The 2N5430 is a NPN bipolar junction transistor (BJT) .
It is a through-hole mounted device with a TO-66 package and a maximum power
dissipation of 40W.
Product Features
-
Collector-emitter voltage (VCEO): 100V
-
DC current gain-min (hFE): 60
-
Maximum collector current: 7A
-
Maximum power dissipation: 40W
-
Through-hole mounting
-
TO-66 package
-
NPN polarity/channel type
-
Silicon transistor element material
-
Non-RoHS compliant
Application Grade: The 2N5430 is a general-purpose transistor suitable for a wide
range of applications, including audio amplifiers, power supplies, and motor control.
Product Applications
-
Audio amplifiers
-
Power supplies
-
Motor control
-
General-purpose switching and amplification
Key Information:
-
Collector-emitter voltage (VCEO): 100V
-
DC current gain-min (hFE): 60
-
Maximum collector current: 7A
-
Maximum power dissipation: 40W
-
Through-hole mounting
-
TO-66 package
-
NPN polarity/channel type
-
Silicon transistor element material
-
Non-RoHS compliant
Overall, the 2N5430 is a robust and reliable transistor suitable for a variety of applications, including audio amplifiers, power supplies, and motor control. Its high power dissipation and collector current make it an excellent choice for high-power applications.
Product Description
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
|
Mfr |
/ |
|
Series |
* |
|
Packaging |
Bulk |
|
Part Status |
Active |
|
Base Product Number |
2N5430 |
Actual image of the product
