Product Details
Brief Description: The 2N6052 is a PNP bipolar junction transistor (BJT) .
It is a single-element device with a TO-3 package and is designed for through-hole mounting.
Product Features
-
Collector Base Voltage (VCBO): 100V
-
Collector-Emitter Breakdown Voltage: 100V
-
Collector Emitter Voltage (VCEO): 3V
-
Continuous Collector Current: 12A
-
DC Current Gain-Min (hFE): 750
-
Frequency - Transition: 4MHz
-
Power Dissipation (Max): 150W
-
Operating Temperature Range: -65°C to 200°C
-
Package / Case: TO-3
-
Mount: Through Hole
-
Polarity: PNP
-
Terminal Finish: Tin/Lead (Sn/Pb)
-
Terminal Form: PIN/PEG
-
Terminal Position: BOTTOM
Application Grade: The 2N6052 is a general-purpose transistor suitable for a wide range of applications, including power amplifiers, switching circuits, and voltage regulators.
Product Applications
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Power amplifiers
-
Switching circuits
-
Voltage regulators
-
Driver circuits
-
Power supplies
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Industrial control systems
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Automotive electronics
-
Aerospace and defense applications
Product Description
|
Type |
Description |
|---|---|
|
PART# |
2N6052 |
|
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
|
Mfr |
- |
|
Series |
- |
|
Packaging |
Tray |
|
Part Status |
Obsolete |
|
Transistor Type |
PNP - Darlington |
|
Current - Collector (Ic) (Max) |
12 A |
|
Voltage - Collector Emitter Breakdown (Max) |
100 V |
|
Vce Saturation (Max) @ Ib, Ic |
3V @ 120mA, 12A |
|
Current - Collector Cutoff (Max) |
1mA |
|
DC Current Gain (hFE) (Min) @ Ic, Vce |
750 @ 6A, 3V |
|
Power - Max |
150 W |
|
Frequency - Transition |
- |
|
Operating Temperature |
-65°C ~ 200°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-204AA, TO-3 |
|
Supplier Device Package |
TO-204 (TO-3) |
|
Base Product Number |
2N6052 |
Actual image of the product
