Product Details
Description
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while providing rugged, reliable, and fast switching
performance. These products are particularly suited for low−voltage,
low−current applications, such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
• High Density Cell Design for Low RDS(on)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• ESD Protection Level: HBM > 100 V, CDM > 2 kV
• This Device is Pb−Free and Halogen Free
Product Description
| Type# | Description |
| PART# | 2N7000 |
| Ihs Manufacturer | / |
| Part Package Code | TO-92-3 |
| Package Description | TO-226, 3 PIN |
| Pin Count | 3 |
| Factory Lead Time | 11 Weeks |
| Samacsys Manufacturer | onsemi |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 0.2 A |
| Drain-source On Resistance-Max | 5 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5 pF |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.4 W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Actual image of the product
