Product Details
Brief Description: The 2N1613 is a NPN bipolar junction transistor (BJT) .
It is a single-element, through-hole mounted device with a TO-39 package.
Features:
Collector-base voltage (VCBO): 75V
Collector-emitter breakdown voltage (VCEO): 50V
Collector-emitter saturation voltage (VCE(sat)): 1.5V
Continuous collector current (IC): 500mA
DC current gain (hFE): 20 (minimum)
Frequency - transition: 60MHz
Gain bandwidth product: 60MHz
Power dissipation (max): 3W
Operating temperature range: -65°C to 150°C
Package: TO-39
Terminal finish: Tin/Lead (Sn/Pb)
RoHS compliant
Application Grade:
The 2N1613 is designed for general-purpose switching applications.
Applications:
Switching circuits
Amplifiers
Oscillators
Logic circuits
Power control circuits
This transistor is suitable for a wide range of applications, including audio amplifiers, power supplies, and motor control circuits. Its high-frequency performance and high-power dissipation make it an excellent choice for high-speed switching and power control applications.
Product Description
| Type | Description |
| PART# | 2N1613 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | / |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Power - Max | 800 mW |
| Frequency - Transition | 80MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Base Product Number | 2N16 |
Actual image of the product
