Product Details

Brief Description: The NVMFS5113PLWFT1G is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is a single-channel device with a built-in diode, designed for surface-mount applications. The device features a high avalanche energy rating and is suitable for automotive applications.

Features:

• P-Channel MOSFET with built-in diode

• Avalanche energy rating: 315 mJ

• Drain-to-source voltage (Vdss): 60V

• Drain-source on resistance (Rds(on)): 0.014 Ohm (max)

• Drive voltage: 4.5V (max) to 10V (min)

• Gate charge (Qg): 83nC (max) @ 10V

• Input capacitance (Ciss): 4400pF (max) @ 25V

• Operating temperature: -55°C to 175°C (TJ)

• Power dissipation: 3.8W (Ta) to 150W (Tc)

• Pulsed drain current: 415A (max)

• Rds(on) @ Id, Vgs: 14m Ohm @ 17A, 10V

• Vgs (max): ±20V

• Vgs(th) @ Id: 2.5V @ 250μA

Application Grade: The NVMFS5113PLWFT1G is designed for automotive applications and is AEC-Q101 qualified. It is suitable for use in high-reliability applications where high avalanche energy and low on-resistance are required.

Applications:

• Automotive power switching

• High-reliability power switching

• High-voltage power switching

• High-current power switching

• Surface-mount power switching

Note: The information provided is based on the product parameters and is subject to change. It is recommended to consult the manufacturer's datasheet and specifications for the most up-to-date and accurate information.

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