Product Details
Power MOSFET
40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFD5852NLWF − Wettable Flanks Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
Product Description
| Type# | Description |
| ANSC PART# | ANSC - NVMFS5113PLT1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr |
/ |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5113 |
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Product datasheet
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